A modified offset roll printing for thin film transistor applications

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• 作者：Nackbong Choi^a ; ^{nbc308@lehigh.edu} ; Hwabok Wee^b ; Seunghee Nam^c ; Jean Lavelle^d ; Miltiadis Hatalis^a
• 关键词：Printing plate (cliché ; ) ; Surface energy ; Offset roll printing ; TFT
• 刊名：Microelectronic Engineering
• 出版年：2012
• 出版时间：March, 2012
• 年：2012
• 卷：91
• 期：Complete
• 页码：93-97
• 全文大小：947 K

文摘

In order to realize a high resolution and high throughput printing method for thin film transistor application, a modified offset roll printing was studied. This roll printing chiefly consists of a blanket with low surface energy and a printing plate (clich¨¦) with high surface energy. In this study, a finite element analysis was done to predict the blanket deformation and to find the optimal angle of clich¨¦¡¯s sidewall. Various etching methods were investigated to obtain a high resolution clich¨¦ and the surface energy of the blanket and clich¨¦ was analyzed for ink transfer. A high resolution clich¨¦ with the sidewall angle of 90¡ã and the intaglio depth of 13 ¦Ìm was fabricated by the deep reactive ion etching method. Based on the surface energy analysis, we extracted the most favorable condition to transfer inks from a blanket to a clich¨¦, and thus thin films were deposited on a Si-clich¨¦ to increase the surface energy. Through controlling roll speed and pressure, two inks, etch-resist and silver paste, were printed on a rigid substrate, and the fine patterns of 10 ¦Ìm width and 6 ¦Ìm line spacing were achieved. By using this printing process, the top gate amorphous indium-gallium-zinc-oxide TFTs with channel width/length of 12/6 ¦Ìm were successfully fabricated by printing etch-resists.