Employing 4-methoxybenzoic acid interfacial-modification to enhance the photovoltaic performance of CdS quantum dot-sensitized solar cells

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• 作者：Lili Yang^a ; ^{jsdxyll@163.com" class="auth_mail" title="E-mail the corresponding author} ; Gang Chen^b ; Pengwei Huo^a ; Ziyang Lu^a ; Chunbo Liu^a ; Yongsheng Yan^a ; ^{yys@ujs.edu.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：CdS quantum dot-sensitized solar cells ; Self-assembled monolayers ; Energy barrier ; Conversion efficiencies
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2016
• 出版时间：15 March 2016
• 年：2016
• 卷：44
• 期：Complete
• 页码：23-29
• 全文大小：2270 K

文摘

The effect of incorporating self-assembled monolayers of 4-methoxybenzoic acid (MBA) on CdS quantum dot-sensitized (QDSSC) solar cells based on ZnO nanorods was evaluated. The MBA was deposited on the ZnO photoanode, with the deposition time being a process variable. Photoluminescence spectra indicated that the MBA modification can suppress the photogenerated electron–hole recombination processes and presumably passivate the surface defects. The ultraviolet photoemission spectroscopy results prove that MBA forms an energy barrier at the interface of ZnO and CdS which may retard the back transfer of electrons. Overall the inclusion of MBA imparts a weak positive enhancement of the photovoltaic performance of these QDSSCs and this is an approach that may be developed to give stronger effects using alternative chemistries.