A bidirectional neural interface CMOS analog front-end IC with embedded isolation switch for implantable devices

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• 作者：Alfian Abdi ^{alfianabdi@ymail.com} ; Hyouk-Kyu Cha ; ^{hkcha@seoultech.ac.kr}
• 关键词：CMOS Analog front-end ; Neural stimulator ; Neural recording amplifier ; Isolation switch ; Implantable device ; High voltage
• 刊名：Microelectronics Journal
• 出版年：2016
• 出版时间：December 2016
• 年：2016
• 卷：58
• 期：Complete
• 页码：70-75
• 全文大小：1428 K
• 卷排序：58

文摘

A bidirectional neural interface analog front-end IC with both stimulation and recording functions is implemented using 0.18-µm standard CMOS process. The proposed IC is comprised of a bipolar biphasic neural stimulator using a transistor-stacked current-mirror driver to achieve good current matching performance in stimulation mode and low-voltage capacitive feedback neural amplifiers for recording mode. In order to save die area, high-voltage isolation switches are embedded within the stimulator core to protect the low-voltage recording circuits from damage. Despite using a low-voltage process, the stimulator is able to deliver up to 1 mA current through 10 kΩ load using 12.8 V supply voltage and the recording amplifier uses 0.8 V supply voltage while consuming 1 µA of current. The complete IC occupies 0.29 mm2 of die area and can be applied for various multi electrode array interface bidirectional neural SoCs in medical implant devices.