Tight-binding and effective mass modeling of armchair graphene nanoribbon FETs

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• 作者：Roberto Grassi ; Stefano Poli ; Elena Gnani ; Antonio Gnudi ; Susanna Reggiani ; Giorgio Baccarani
• 关键词：Graphene nanoelectronics ; GNR-FET ; Tight-binding ; Quantum transport ; Non-equilibrium green functions
• 刊名：Solid-State Electronics
• 出版年：2009
• 出版时间：April 2009
• 年：2009
• 卷：53
• 期：4
• 页码：462-467
• 全文大小：966 K

文摘

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I–V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.