Graphene base heterojunction transistor: An explorative study on device potential, optimization, and base parasitics
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- 作者：Valerio Di Lecce ; valerio.dilecce@unibo.it" class="auth_mail" title="E-mail the corresponding author ; valerio.dilecce82@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Roberto Grassi1 ; Antonio Gnudi ; Elena Gnani ; Susanna Reggiani ; Giorgio Baccarani
- 关键词：Base parasitics ; Cut-off frequency ; Graphene ; Orientation ; Simulation ; Transistor
- 刊名：Solid State Electronics
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：114
- 期：Complete
- 页码：23-29
- 全文大小：904 K
文摘
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Quantum simulations results are shown of GBHTs with ideal graphene/Si–Ge interfaces.
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GBHTs can potentially outperform optimized HBTs by a 2.8 larger cut-off frequency.
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The Si/Ge crystal orientation has a negligible effect on the GBHT performance.
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The doping density can be tailored to maximize the device performance.
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THz operation is predicted for Si-based GBHT, provided base parasitics are minimized.