Theoretical analysis and modeling for nanoelectronics
详细信息 查看全文
- 作者：Giorgio Baccarani ; giorgio.baccarani@unibo.it" class="auth_mail" title="E-mail the corresponding author ; Elena Gnani ; Antonio Gnudi ; Susanna Reggiani
- 关键词：Device modeling ; Device scaling ; Simulation techniques ; Quasi-ballistic transport ; Quantum confinement
- 刊名：Solid State Electronics
- 出版年：2016
- 出版时间：November 2016
- 年：2016
- 卷：125
- 期：Complete
- 页码：2-13
- 全文大小：3512 K
文摘
In this paper we review the evolution of Microelectronics and its transformation into Nanoelectronics, following the predictions of Moore’s law, and some of the issues related with this evolution. Next, we discuss the requirements of device modeling and the solutions proposed throughout the years to address the physical effects related with an extreme device miniaturization, such as hot-electron effects, band splitting into multiple sub-bands, quasi-ballistic transport and electron tunneling. The most important physical models are shortly highlighted, and a few simulation results of heterojunction TFETs are reported and discussed.