Design guidelines for GaSb/InAs TFET exploiting strain and device size
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- 作者：Michele Visciarelli michele.visciarelli2@unibo.it ; Elena Gnani ; elena.gnani@unibo.it ; Antonio Gnudi ; Susanna Reggiani ; Giorgio Baccarani
- 关键词：Full-quantum simulation ; Tunnel Field-Effect Transistor (TFET) ; Strain configurations
- 刊名：Solid-State Electronics
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：129
- 期：Complete
- 页码：157-162
- 全文大小：1839 K
- 卷排序：129
文摘
A simulation study exploring the possibility of performance improvements for GaSb/InAs nanowire TFETs under appropriate stress conditions is carried out. It is demonstrated that biaxial tensile strain induces a remarkable enhancement of the on-state current thanks to bandgap reduction; however, a degradation of the ambipolar behavior is observed as well. Some stress intensity values and device geometry configurations are investigated. The best simulated device can achieve an on/off current ratio of about 3×1073×107 with ION≈0.33ION≈0.33 mA/μμm at VDD=0.3VDD=0.3 V.