Photoluminescence and the gallium problem for highest-mobility GaAs/AlGaAs-based 2d electron gases
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- 作者：F. Schlä ; pfer ; W. Dietsche ; werner.dietsche@phys.ethz.ch" class="auth_mail" title="E-mail the corresponding author ; C. Reichl ; S. Faelt ; W. Wegscheider
- 关键词：A1. Characterization ; A1. Photoluminescence ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B3. Heterojunction semiconductor devices
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 May 2016
- 年：2016
- 卷：442
- 期：Complete
- 页码：114-120
- 全文大小：1105 K
文摘
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GaAs/AlGaAs heterostructures containing 2d electron gases have been grown in several MBE systems using different Ga lots.
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Electron mobility and photoluminescence (PL) were measured and compared.
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Seemingly equivalent Ga lots led to either excellent or mediocre mobility and PL.
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Mobility and PL seem to be correlated in many cases.
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PL may serve as an early indicator of poor Ga quality.