Electron gas quality at various (110)-GaAs interfaces as benchmark for cleaved edge overgrowth
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- 作者：S. Riedi ; sriedi@phys.ethz.ch ; C. Reichl ; M. Berl ; L. Alt ; A. Maier ; W. Wegscheider
- 关键词：A1. Characterization ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B3. Cleaved edge overgrowth
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 December 2016
- 年：2016
- 卷：455
- 期：Complete
- 页码：37-42
- 全文大小：1438 K
- 卷排序：455
文摘
MBE growth on (1 1 0)-GaAs substrates as prerequisite for cleaved edge overgrowth. 2DEGs on (1 1 0) monitor wafers and ex and in situ cleaved facets are compared. Transport characteristics of monitor wafer are valid benchmark for cleaved facets. Roughness of in situ cleaved facet is decisive for the quality of the induced 2DEG.