A new neutron detector development based on silicon semiconductor and 6LiF converter
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- 作者：J. Schelten ; M. Balzhä ; user ; F. Hö ; ngesberg ; R. Engels ; R. Reinartz
- 关键词：Detector ; Position sensitivity ; Semiconductor
- 刊名：Physica B
- 出版年：1997
- 出版时间：2 June 1997
- 年：1997
- 卷：234-236
- 期：Complete
- 页码：1084-1086
- 全文大小：163 K
文摘
The enormous progress in silicon semiconductor technology allows one to construct one- and two-dimensional position-sensitive detectors for neutrons with large area Si diodes and thin 6LiF converter layers. Such detectors promise to have extreme low gamma sensitivity, a spatial resolution in the wide range from 10 to 0.1 mm, and operate in varying magnetic fields as those present in spin-echo experiments. The first position sensitive neutron detector of this kind was built with a strip diode. Its spatial resolution was 1.25 mm and its gamma sensitivity less than 10−6. Sufficiently large detection efficiency for thermal and subthermal neutrons can be obtained by applying various methods: (1) by processing deep grooves filled with 6LiF in the diodes via anisotropic etching with KOH or sawing with diamond blades, (2) by inclining semiconductor/converter/semiconductor sandwiches with respect to the neutron beam direction, and (3) by stacking such sandwiches. Some investigations towards higher detector efficiency have started.