1.48 μm emission properties and the cross-relaxation mechanism in chalcohalide glass doped with Tm³⁺

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• 作者：Han ; Yong Seop ; Lee ; Dong Jun ; Heo ; Jong
• 关键词：C150 ; R118 ; 42.70.Ce ; 78.20.&minus ; e ; 78.55.&minus ; m
• 刊名：Journal of Non-Crystalline Solids
• 出版年：2003
• 出版时间：July 1, 2003
• 年：2003
• 卷：321
• 期：3
• 页码：210-216
• 全文大小：337 K

文摘

1.48 μm emission properties and the cross-relaxation mechanism of Tm³⁺ ions in 0.7(Ge_0.25As_0.10S_0.65)+0.15GaS_3/2+0.15CsBr glass were investigated. Both the relative intensity ratio of the 1.48 μm emission to 1.82 μm and the measured lifetime of the ³H₄ level decreased with increasing Tm³⁺ concentration. When temperature decreased from room temperature to 20 K, lifetimes of the ³H₄ level increased from 670 to 970 μs. At the same time, the critical distance for cross-relaxation decreased from 1.11 to 0.93 nm. These results indicate that cross-relaxation (³H₄, ³H₆→³F₄, ³F₄) became less effective as temperature decreased. Analysis of the temperature dependence of cross-relaxation rates showed that cross-relaxation in Tm³⁺ is a phonon-assisted energy transfer process. The major phonon contributing to the process is from the Ga–Br vibration in [GaS_3/2Br]⁻ units.