Semiconducting properties of Cu₂In₃VO₉ ceramic material

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• 作者：T. Groń^a ; ^{Tadeusz.Gron@us.edu.pl} ; M. Bosacka^b ; E. Filipek^b ; A. Pacześna^b ; P. Urbanowicz^a ; B. Sawicki^a ; H. Duda^a
• 关键词：B. Spectroscopy ; C. Electrical properties ; C. Optical properties
• 刊名：Ceramics International
• 出版年：2017
• 出版时间：1 February 2017
• 年：2017
• 卷：43
• 期：2
• 页码：2456-2459
• 全文大小：1076 K
• 卷排序：43

文摘

Cu2In3VO9 has been characterized by UV–vis–NIR and dielectric spectroscopy and measurements of its electrical conductivity and thermoelectric power to be a semiconductor with the activation energy Ea1=0.61 eV and Ea2=0.03 eV in the intrinsic and extrinsic region, respectively, the direct allowed energy gap Eg =1.09 eV, the change of sign of the thermoelectric power from p to n at Tn-p=400 K, the strongly temperature-dependent and frequency both dielectric constant (εr) and loss tangent (tan δ) above 160 K. Moreover, the I-V characteristics and conductance provided the evidence of symmetrical and non-linear behaviour typical of strong emission of charge carriers induced by temperature and voltage. These results are interpreted in the framework of vacancy acceptor and donor levels in the honeycomb lattice structure forming a two-dimensional frustrated system assuming the relaxation process like with Maxwell-Wagner or Jonscher.