Hybrid pixel detector with epitaxial sensors and readout in 130 nm CMOS technology for PANDA

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• 作者：D. Calvo ; P. De Remigis ; T. Kugathasan ; G. Mazza ; A. Rivetti ; R. Wheadon
• 关键词：Epitaxial ; Pixel ; 130 nm CMOS
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2010
• 出版时间：11 December 2010
• 年：2010
• 卷：624
• 期：2
• 页码：290-294
• 全文大小：507 K

文摘

The ongoing program to develop a custom hybrid pixel detector for the innermost layers of the tracking system of the PANDA experiment foresees thinned epitaxial silicon sensors and pixel readout electronics based on 130 nm CMOS technology. The displacement damage test with neutron from the nuclear reactor has been performed on some test structures, characterized by high resistivity epitaxial silicon material, showing annealing effects. Besides, the second reduced scale prototype for the pixel readout has been designed and tested.<p>Results concerning study of epitaxial silicon devices and characterization of chip using time-over-threshold (TOT) approach will be presented.