Characterization of SOI monolithic detector system

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• 作者：P.L. 脕lvarez-Rengifo ; L. Soung Yee ; E. Martin ; E. Cortina ; C. Ferrer
• 关键词：Monolithic ; SOI ; Pixel
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：11 December, 2013
• 年：2013
• 卷：731
• 期：Complete
• 页码：270-275
• 全文大小：1595 K

文摘

A monolithic active pixel sensor for charged particle tracking was developed. This research is performed within the framework of an R&D project called TRAPPISTe (Tracking Particles for Physics Instrumentation in SOI Technology) whose aim is to evaluate the feasibility of developing a Monolithic Active Pixel Sensor (MAPS) with Silicon-on-Insulator (SOI) technology. Two chips were fabricated: TRAPPISTe-1 and TRAPPISTe-2. TRAPPISTe-1 was produced at the WINFAB facility at the Universit茅 catholique de Louvain (UCL), Belgium, in a fully depleted (FD-SOI) CMOS process. TRAPPISTe-2 was fabricated with the LAPIS FD-SOI CMOS process. The electrical characterization on single transistor test structures and of the electronic readout for the TRAPPISTe series of monolithic pixel detectors was carried out. The behavior of the prototypes鈥?electronics as a function of the back voltage was studied. Results showed that both readout circuits exhibited sensitivity to the back voltage. Despite this unwanted secondary effect, the responses of TRAPPISTe-2 amplifiers can be improved by a variation in the circuit parameters.