Effects of Si-doped GaAs layer on optical properties of InAs quantum dots

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• 作者：Park ; Y.M. ; Park ; Y.J. ; Kim ; K.M. ; Lee ; J.I. ; Yoo ; K.H.
• 关键词：81.07.Ta ; 78.67.Hc ; 72.20.Jv ; Quantum dots ; Si-doped GaAs layer ; State filling ; Bandgap normalization
• 刊名：Physica E: Low-dimensional Systems and Nanostructures
• 出版年：2005
• 出版时间：January, 2005
• 年：2005
• 卷：25
• 期：4
• 页码：647-653
• 全文大小：280 K

文摘

We have investigated the optical properties of InAs self-assembled quantum dots (SAQDs) with the Si-doped GaAs barrier layer. Two types of samples are fabricated according to the position of the Si-doped GaAs layer. For type A samples the Si-doped GaAs layer is grown below the QDs, whereas for type B samples the Si-doped GaAs layer is grown above the QDs. For both types of samples the excited-state emissions caused by state filling are observed in photoluminescence (PL) spectra at high excitation power densities. The bandgap renormalization of QDs can be found from the shift of the PL peak energy. Particularly, for type A samples the Si atoms act as nucleation centers during the growth of InAs QDs on the Si-doped GaAs layer and affect the density and the size of the QDs. The Si-doped GaAs layer in type A samples has more effects on the properties of QDs, such as state filling and bandgap renormalization than those of type B samples.