Phase formation, chemical composition and electrical studies of Ti/Si bilayer system

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• 作者：Chhagan Lal ; Renu Dhunna ; I.P. Jain
• 关键词：Grazing incidence X-ray diffraction ; Silicides ; X-ray photoelectron spectroscopy ; Schottky barrier height
• 刊名：Vacuum
• 出版年：2009
• 出版时间：12 February 2009
• 年：2009
• 卷：83
• 期：6
• 页码：931-935
• 全文大小：264 K

文摘

The annealing effects over a range of temperatures of the titanium film (90 nm) grown on Si(111) by electron gun evaporation technique were investigated using physical and electrical measurements. Grazing Incidence X-ray Diffraction experiment shows a stable titanium disilicides formation at higher annealing temperature. The depth profiling data using X-ray Photoelectron Spectroscopy show that the properties are closely related to the change of the interfacial layer and chemical state under the high-temperature annealing. The Schottky Barrier Height, as estimated by the current–voltage measurement is 0.75, 0.695, 0.662 and 0.60 eV for pristine and annealed samples at 450, 550 and 700 °C respectively.