Optimization of the thermal contact resistance within press pack IGBTs

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• 作者：Erping Deng^a ; ^b ; ^{dengerpinghit@163.com} ; Zhibin Zhao^a ; Peng Zhang^b ; Yongzhang Huang^a ; Jinyuan Li^b
• 关键词：Press pack IGBTs ; Thermal contact resistance ; Temperature ; Clamping force ; Nanosilver sintering technology
• 刊名：Microelectronics Reliability
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：69
• 期：Complete
• 页码：17-28
• 全文大小：2716 K
• 卷排序：69

文摘

A theoretical model with experimental data to make it more precise is proposed to predict the thermal contact resistance. An indirect measurement of the thermal resistance variation is proposed to predict the thermal contact resistance variation. Nanosilver sintering technology is put forward to reduce thermal contact resistance within press pack IGBTs. FEM and experimental results indicate that the high temperature and clamping force have a significance effect.