Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice

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• 作者：Honggyu Kim^a ; ^b ; Yifei Meng^a ; ^b ; Jean-Luc Rouvié ; re^c ; Jian-Min Zuo^a ; ^b ; ^{jianzuo@illinois.edu}
• 刊名：Micron
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：92
• 期：Complete
• 页码：6-12
• 全文大小：2564 K
• 卷排序：92

文摘

HAADF-STEM imaging and peak separation method are used for sub-lattice strain analysis. Using the template matching method, atomic column positions are determined with picometer precision. In incorporation into InAs layer and GaAs-like interfaces are revealed by strain analysis. X-ray diffraction results based on digital models are consistent with STEM analysis.