Epitaxial growth of Au on Ge(001) surface: Photoelectron spectroscopy measurements and first-principles calculations

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• 作者：Dana G. Popescu ; Marius A. Husanu
• 关键词：Epitaxial growth ; X-ray photoelectron spectroscopy ; Angle-resolved photoelectron spectroscopy ; Band-bending ; First-principles calculations
• 刊名：Thin Solid Films
• 出版年：3 February, 2014
• 年：2014
• 卷：552
• 期：Complete
• 页码：241-249
• 全文大小：2142 K

文摘

A single atomic Au layer is grown epitaxially on a Ge(001) surface featured by (2 脳 1) reconstruction. The low energy electron diffraction pattern of the Au/Ge(001) surface indicates the formation of a square structure with the length of crystalline domains of ~ 3 nm. Ab-initio calculations show that Au growth stabilizes the Ge surface in symmetric dimers and angle-resolved photoelectron spectroscopy measurements reveal its metallic character. The modifications in the electronic properties of the Ge surface as a result of annealing are discussed and the consequences as reflected in X-ray photoelectron spectroscopy (XPS) measurements are underlined. The deformation density indicates the regions with covalent Au-Ge bonds. These bonds are identified from Au 4f and Ge 3d XPS data.