Delta-ray production in silicon tracking systems for 2-50 GeV electrons
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- 作者：Hou ; S.R. ; Ambrosi ; G. ; Burger ; W.J. ; Chang ; Y.H. ; Chen ; A.E. ; Lin ; W.T. ; Produit ; N. ; Ribordy ; M.
- 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- 出版年：1998
- 出版时间：November 21, 1998
- 年：1998
- 卷：418
- 期：1
- 页码：145-153
- 全文大小：539 K
文摘
The production of δ-ray electrons in silicon strip tracking systems is measured for electrons in the energy range of 2-50 GeV. The results are compared to GEANT calculations. The production cutoff threshold is calibrated, and a value of Tcut = 500 keV is chosen. The δ-ray angular distribution is measured for electrons transmitting through a 320 μm silicon wafer. The δ-ray production rate is approximately 1.3 % within an angular region of 1-50 mrad.