Electron dynamics at semiconductor surfaces and interfaces
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  • 作者:Haight ; Richard
  • 刊名:Chemical Physics
  • 出版年:1996
  • 出版时间:April 15, 1996
  • 年:1996
  • 卷:205
  • 期:1-2
  • 页码:231-244
  • 全文大小:1.14 M
文摘
The application of femtosecond laser photoemission to the study of electron dynamics at semiconductor surfaces and interfaces is described. Fundamental processes such as electron-electron and electron-phonon scattering, diffusion and recombination are discussed. The dynamical evolution of photoexcited electrons on the As/Ge(111) surface is studied with broadly tunable harmonics. Extension of high harmonic generation to produce photon energies approaching 80 eV have resulted in the first atomic core level photoemission spectra from a tunable femtosecond source. Possible applications of harmonics to studies of surface photochemistry are discussed.

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