Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSF

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• 作者：Okui ; Masahiko ; Nishimoto ; Manabu
• 关键词：81.05 ; 81.10 ; 61.72 ; A1. Defects ; A1. Point defects ; A2. Czochralski method ; A2. Growth from melt ; A2. Single crystal growth ; B2. Semiconducting silicon
• 刊名：Journal of Crystal Growth
• 出版年：2002
• 出版时间：April, 2002
• 年：2002
• 卷：237-239
• 期：Part 3
• 页码：1651-1656
• 全文大小：188 K

文摘

The effect of axial temperature gradient (G) on the formation of grown-in defect regions in Czochralski silicon (CZ-Si) crystals was investigated. A CZ-Si crystal was grown with the temperature gradient at the center (G_c) far higher than that at the outside (G_s) by tuning the hot zone of the pulling furnace. It was found, by changing the growth rate (f_p), that the shape of Ring-like region of oxidation-induced stacking faults (Ring-OSF), including the crystal axis and the diameter, became a W-band which has not been reported previously. This W-band results in the reversion of grown-in defect regions inside and outside of the Ring-OSF in the wafers. That is, the wafers included a dislocation-cluster region inside the Ring-OSF, while the void region was outside the Ring-OSF. The appearance of the W-band of Ring-OSF was readily explained using the values of f_p/G_c and f_p/G_s.