Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents

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• 作者：Naoyoshi Komatsu^a ; Takeshi Mitani^a ; ^{t-mitani@aist.go.jp} ; Yuichiro Hayashi^a ; Tomohisa Kato^a ; Shunta Harada^b ; Toru Ujihara^b ; Hajime Okumura^a
• 关键词：A1. Roughening ; A1. Solvents ; A1. Surface structure ; A2. Growth from solution ; B1. Silicon carbide
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 January 2017
• 年：2017
• 卷：458
• 期：Complete
• 页码：37-43
• 全文大小：1587 K
• 卷排序：458

文摘

Addition of Sn and Al to SiCr solvents suppressed surface roughening and polytype instability of 4H-SiC. Surface modification was discussed considering the wetting properties of solvents. Interfacial energy between solvents and 4H-SiC increased with addition of Sn and Al. Surface roughening was improved by lowering 2D nucleation frequency owing to the increase of the interfacial energy.