Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates
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- 作者：Birgit Kallinger ; Patrick Berwian ; Jochen Friedrich ; Bernd Thomas
- 关键词：A1. Surface roughening ; A3. Chemical vapor deposition ; A3. Hot-wall epitaxy ; B1. Silicon carbide
- 刊名：Journal of Crystal Growth
- 出版年：2013
- 出版时间：15 October, 2013
- 年：2013
- 卷：381
- 期：Complete
- 页码：127-133
- 全文大小：930 K
文摘
A comprehensive study on the step-controlled homoepitaxial growth on the (0001)Si-face of vicinal 4H-SiC substrates was performed in order to establish epitaxial growth on 2¡ã towards off-cut substrates and 4¡ã towards off-cut substrates. A standard epitaxial growth process was developed by optimizing the growth temperature T, Si/H ratio and C/Si ratio for growth on 4¡ã towards off-cut substrates. Thereby, step-controlled epitaxial growth was achieved within a broad operating window. The surface roughness of such epilayers varies typically between rms=0.5 nm and rms=2.5 nm and step-controlled growth is conserved even at a growth rate of . Then, the standard growth process was applied to substrates with different off-cut angles of 2¡ã, 4¡ã and 8¡ã as well as with different off-cut directions and . The step-controlled growth was achieved also within a wide range of Si/H ratio and C/Si ratio for growth on 8¡ã and 4¡ã off-cut substrates, but the process window narrows strongly for growth on 2¡ã off-cut substrates. The epilayers' surface roughness increases with decreasing off-cut angle of the substrate. Epilayers grown on 4¡ã towards off-cut substrates were significantly smoother than epilayers grown on 4¡ã towards off-cut substrates. No influence of the substrates' off-cut angle and direction on the growth rate was found. The experimental results of this comprehensive study are discussed globally in consideration of other relevant publications.