The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode
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- 作者：D.Q. Yua ; W.S. Laua ; ; Hei Wonga ; 1 ; Xuan Fenga ; Shurong Donga ; K.L. Peyb
- 关键词：Ta2O5 ; Surface roughness ; Surface smoothing ; Effective Schottky barrier height
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：June 2016
- 年：2016
- 卷：61
- 期：Complete
- 页码：95-98
- 全文大小：708 K
文摘
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The leakage current characteristics can be a function of the bottom electrode of the MIM structure.
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The thickness of the bottom electrode affects the leakage current characteristics through two mechanisms.
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The thickness of the bottom W layer can affect Ta2O5 layer CVD process.
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Rougher surface of the bottom W electrode can result in a smaller effective Schottky barrier height.