Modelling and simulation of subthreshold behaviour of cylindrical surrounding double gate MOSFET for enhanced electrostatic integrity
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- 作者：Jay Hind Kumar Vermaa ; jkv.electronics@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Subhasis Haldarb ; subhasis_haldar@rediffmail.com" class="auth_mail" title="E-mail the corresponding author ; R.S. Guptac ; rsgupta1943@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Mridula Guptaa ; mridula@south.du.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：ATLAS ; Cylindrical surrounding double gate (CSDG) MOSFET ; Electric field ; threshold voltage
- 刊名：Superlattices and Microstructures
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：88
- 期：Complete
- 页码：354-364
- 全文大小：1447 K
文摘
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Potential and threshold voltage model has been developed for CSDG MOSFET.
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Super-position technique has been used to solve the Poisson's equation in cylindrical coordinate.
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Two cylindrical surrounding gates provide maximum controllability over the channel charge.
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Tremendous increment in drain current and transconductance for CSDG MOSFET than the CSG MOSFET.