Impact of nitrogen post deposition annealing on hafnium zirconate dielectrics for 32 nm high-performance SOI CMOS technologies

详细信息    查看全文

• 作者：T. Kelwing ; A. Naumann ; M. Trentzsch ; F. Graetsch ; B. Bayha ; L. Herrmann ; B. Trui ; D. Rudolph ; D. Lipp ; G. Krause ; R. Carter ; R. Stephan ; P. Kü ; cher ; W. Hansch
• 关键词：High-k dielectric ; Annealing ; Gate leakage ; Performance ; Reliability ; SOI CMOS
• 刊名：Microelectronic Engineering
• 出版年：2011
• 出版时间：February 2011
• 年：2011
• 卷：88
• 期：2
• 页码：141-144
• 全文大小：675 K

文摘

The impact of either N₂ or N₂/O₂ Post Deposition Annealing (PDA) and Post Work Function Annealing (PWFA) combinations as well as single N₂ or N₂/O₂ PWFA with different process parameters on HfZrO₄ has been investigated in detail for high performance 32 nm SOI CMOS devices. Electrical parameters such as leakage current, capacitance equivalent thickness (CET), threshold voltage and performance as well as reliability data have been taken into account in order to evaluate these treatments. N₂/O₂ annealing results in severe oxide regrowth due to the presence of oxygen in the annealing ambient. A detailed investigation on the impact of N₂ PWFA has been performed.

Finally significant gate leakage current benefit, performance and reliability improvements are demonstrated especially for the N₂ PWFA treatments in combination with HfZrO₄.