Properties of ITO films deposited by RF superimposed DC magnetron sputtering

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• 作者：Se Il Kim ; Sang Hyun Cho ; Sung Ryong Choi ; Han Ho Yoon ; Pung Keun Song
• 关键词：Magnetron sputtering ; Transparent conductive oxide ; Indium tin oxide ; Electrical and structural properties
• 刊名：Current Applied Physics
• 出版年：2009
• 出版时间：May 2009
• 年：2009
• 卷：9
• 期：3, Supplement 1
• 页码：S262-S265
• 全文大小：318 K

文摘

ITO films were deposited using a RF superimposed DC magnetron sputtering system with an ITO (90.0 wt % In₂O₃ and 10.0 wt % SnO₂) single ceramic target at either room temperature or the crystallization temperature of ITO films (170 °C). The total sputtering power (DC + RF) was maintained at 70 W, and the RF portion of the total power was varied from 0 % to 100 % . The discharge voltage and deposition rate decreased with increasing RF portion of the total power. The (2 2 2) X-ray diffraction peak showed the highest intensity at a RF/(RF + DC) power ratio of 50 % with a total power of 70 W. The ITO film deposited at a RF/(RF + DC) power ratio of 50 % at 170 °C showed relatively low resistivity (2.52 × 10⁻⁴ Ω cm).