Metal cocatalyst-loaded p-type N-doped Ta2O5 (N-Ta2O5) films were prepared for photoelectrochemical hydrogen production.
N doping into Ta2O5 led to dual-functionally modification: p-type conduction and bandgap narrowing.
N doping into oxide is a new methodology to design a novel semiconductor for water splitting.
Pt and Rh-loaded N-Ta2O5 were found to be efficient visible light sensitive photocathodes for hydrogen production by water splitting.