Laser-Annealed, Implanted Boron Emitters for B-BSF Silicon Solar Cells

详细信息    查看全文

• 作者：B. Paviet-Salomon ; J.F. Lerat ; A. Lanterne ; T. Emeraud ; S. Gall ; A. Slaoui
• 关键词：Silicon ; ion implantation ; boron ; laser thermal annealing ; back-surface field
• 刊名：Energy Procedia
• 出版年：2012
• 出版时间：2012
• 年：2012
• 卷：27
• 期：Complete
• 页码：474-479
• 全文大小：438 K

文摘

Boron (B) emitters are required in an increasing number of silicon solar cells technologies, each of them requires an appropriate emitter profile. This work aims at investigating laser thermal annealing (LTA) from implanted B as a versatile approach for B-emitter processing compared to standard furnace annealing. Symmetrical p+/n/p+ structures featuring various LTA B-emitters were characterized using the QssPC technique. Experimental results show that in contrast to thermally-diffused B-emitters, implied Voc of LTA emitters increases when their sheet resistance decreases. Numerical simulations suggest that the observed trend could be attributed to a reduction in the surface recombination velocity. LTA emitters were then integrated as B-BSF into silicon solar cells. Gains of 2 mV in Voc and 0.8 mA/cm£¤ in Jsc compared to Al-BSF were obtained, leading to an overall efficiency enhancement of 0.3 % abs