Structural characterization of TiO₂ films grown on LaAlO₃ and SrTiO₃ substrates using reactive molecular beam epitaxy

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• 作者：X. Weng ; P. Fisher ; M. Skowronski ; P.A. Salvador ; O. Maksimov
• 关键词：A1. Electron Energy Loss Spectrometry ; A1. Transmission Electron Microscopy ; A3. Molecular Beam Epitaxy ; B1. TiO₂
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 出版时间：1 February 2008
• 年：2008
• 卷：310
• 期：3
• 页码：545-550
• 全文大小：940 K

文摘

We have studied the microstructure of TiO₂ films, grown by reactive molecular beam epitaxy (MBE) on LaAlO₃ (LAO) and SrTiO₃ (STO) substrates, using a combination of transmission electron microscopy (TEM) and electron energy loss spectrometry (EELS). TiO₂ films grew epitaxially in the anatase polymorph and exhibited the crystallographic orientation relation of name=""mml1"">nce?_ob=MathURL&_method=retrieve&_udi=B6TJ6-4R53RHB-1&_mathId=mml1&_user=10&_cdi=5302&_rdoc=6&_acct=C000050221&_version=1&_userid=10&md5=cba66feec3ade1b314ae6722a275c8eb"">ncedirect.com/cache/MiamiImageURL/B6TJ6-4R53RHB-1-1/0?wchp=dGLbVzz-zSkzS"" alt=""Click to view the MathML source"" align=""absbottom"" border=""0"" height=17 width=239>. High-resolution TEM and EELS studies indicated the presence of a cubic TiO_x phase at the TiO₂/STO interface. Interfacial TiO_x phases were eliminated and a sharp TiO₂/STO interface was achieved by growing the TiO₂ film on a heteroepitaxial STO buffer layer.