Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology
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- 作者：Kyungbae Park ; Chulseung Lim ; Donghyuk Yun ; Sanghyeon Baeg
- 关键词：Active-precharge hammering on a row fault ; DDR3 SDRAM ; 3 ; × ; nm technology ; TCAD device model ; Cell retention time
- 刊名：Microelectronics Reliability
- 出版年：2016
- 出版时间：February 2016
- 年：2016
- 卷：57
- 期：Complete
- 页码：39-46
- 全文大小：1379 K
文摘
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The failure mechanism due to hammered accesses was investigated.
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Discharging by hammered accesses was duplicated by using SPICE and TCAD tools.
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It was validated by the experiments with commodity DDR3 from three manufacturers.
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The acceleration of discharging is influenced by the three parameters.
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In the worst condition, the failure in a normal cell of a component occurred at 200 K.