Recombinant azurin-CdSe/ZnS hybrid structures for nanoscale resistive random access memory device

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• 作者：Ajay Kumar Yagati^a ; ^b ; Sang-Uk Kim^a ; Taek Lee^c ; Junhong Min^d ; Jeong-Woo Choi^a ; ^e ; ^{jwchoi@sogang.ac.kr}
• 关键词：Biohybrid ; Recombinant technology ; Random access memory ; Electrical bistability ; Bioelectronic device
• 刊名：Biosensors and Bioelectronics
• 出版年：2017
• 出版时间：15 April 2017
• 年：2017
• 卷：90
• 期：Complete
• 页码：23-30
• 全文大小：1140 K
• 卷排序：90

文摘

We developed a bionano hybrid material composed of recombinant azurin (Az) and CdSe-ZnS quantum dot to perform as a resistive random access memory (ReRAM) device. Site specific amino acid sequences were introduced in Az to bind with the surface of CdSe-ZnS nanoparticle allowing the formation of a hybrid and voltage-driven switching enabled to develop a resistive random access memory (ReRAM) device. The developed device shown good stability and repeatability and operates at low voltages thus makes it promising candidate for future memory device applications.