Blocks and residual stresses in shaped sapphire single crystals

详细信息    查看全文

• 作者：V.M. Krymov ; Yu.G. Nosov ; ^{yu.nosov@mail.ioffe.ru} ; S.I. Bakholdin ; V.N. Maslov ; I.L. Shul&prime ; pina ; V.I. Nikolaev
• 关键词：A1. Stresses ; A1. Defects ; A1. X-ray topography ; A2. Stepanov method ; A2. Edge defined film fed growth ; B1. Sapphire
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：314-319
• 全文大小：1005 K
• 卷排序：457

文摘

Blocks and residual stresses in sapphire crystals grown by the Stepanov method were studied. Conditions for the growth of block-free sapphire crystals along 〈c〉 orientation were identified. Residual stresses were measured in shaped crystals of various geometry. The model of block structure formation in shaped sapphire crystals has been proposed.