The Diffusion Coefficient of Lithium Tantalite (LiTaO₃) with Temperature Variations on LAPAN-IPB Satellite Infra-red Sensor

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• 作者：Agus Ismangil^a ; ^{a.ismangil.physics@gmail.com" class="auth_mail" title="E-mail the corresponding author} ; Irmansyah^b ; Irzaman^b
• 关键词：Lithium tantalate (LiTaO3) ; electrical conductivity ; diffusion coefficients
• 刊名：Procedia Environmental Sciences
• 出版年：2016
• 出版时间：2016
• 年：2016
• 卷：33
• 期：Complete
• 页码：668-673
• 全文大小：198 K

文摘

Lithium tantalate, which has chemical formula of LiTaO3, thin films have been grown on a p-type Si substrate (100) by using chemical solution deposition and spin coating techniques at speed of 3000 rpm for 30 seconds. LiTaO₃ thin films were made in concentration of 2.5 M and at annealing temperatures of 550 °C, 600 °C, 650 °C, 700 °C, 750 °C, and 800 °C. The purpose of this study determines the diffusion coefficient of lithium tantalate (LiTaO₃) above the silicon substrate (100) on the p-type annealing temperature of 550 °C, 600 °C, 650 °C, 700 °C, 750 °C and 800 °C. These thin films were characterized by using LCR meter. The electrical conductivity values of LiTaO3 films were in the range of 10^-6 - 10^-5 S/cm, where the higher the electrical conductivity, the higher the light intensity. This indicates that the LiTaO3 films was a semiconductor material. In addition, the higher the energy that moves the particles leads to the faster the diffusion. The diffusion coefficients of Li-TaO3 films were in the range of 57 - 391 nm²/s.