Photoelectron diffraction as a tool for the study of a buried interface during heteroepitaxial growth of Sb/Ge/Si(111)

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• 作者：Westphal ; C. ; Dreiner ; S. ; Sö ; keland ; F. ; Zacharias ; H.
• 关键词：Antimony ; Epitaxy ; Germanium ; Low index single crystal surfaces ; Semiconductor interfaces ; Silicon ; X-ray photoelectron spectroscopy
• 刊名：Surface Science
• 出版年：1998
• 出版时间：January, 1998
• 年：1998
• 卷：396
• 期：1-3
• 页码：87-93
• 全文大小：519 K

文摘

X-ray photoelectron diffraction is used to analyze the structure of a buried Ge/Si interface below a covering Sb layer. The Si(111) crystalline structure below Ge and Sb adsorbate layers is clearly seen in the diffraction pattern. The epitaxial growth of 2-10 Ge layers on Si(111) is mediated by a monolayer of Sb terminating the interface to the vacuum. The Sb photoelectron diffraction pattern shows no intense forward scattering maximum, indicating no Sb below the surface. The Ge film grows to form an epitaxial double layer at the interface, followed by layer-by-layer growth. For two Ge layers, the average vertical lattice constant of Si(111) is compressed due to adsorbate-induced stress. Also, the average vertical Ge lattice constant is compressed.