Oxide thickness-dependent effects of source doping profile on the performance of single- and double-gate tunnel field-effect transistors

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• 作者：Nguyen Dang Chien^a ; ^{chiennd@dlu.edu.vn} ; Chun-Hsing Shih^b
• 关键词：Source doping effects ; EOT scaling ; Band-to-band tunneling ; Tunnel field-effect transistor ; Low-bandgap TFET
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：284-299
• 全文大小：737 K
• 卷排序：102

文摘

The effects of source doping profile on the TFET performance depend significantly on the EOT. The effect of source concentration on the on-current of TFETs is enhanced with decreasing the EOT. Gradual source doping profiles even improve the performance of TFETs with thin EOTs.