Vertical poly-Si select pn-diodes for emerging resistive non-volatile memories
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- 作者：D.S. Golubović ; A.H. Mir ; a ; N. Akil ; R.T.F. van Schaijk ; M.J. van Duuren
- 关键词：Vertical poly-Si diodes ; Resistive RAM ; Cross-point memory arrays
- 刊名：Microelectronic Engineering
- 出版年：2007
- 出版时间：December 2007
- 年：2007
- 卷：84
- 期：12
- 页码：2921-2926
- 全文大小：323 K
文摘
Vertical polycrystalline silicon pn-diodes have been investigated as the select device for resistive non-volatile memories. The diodes have been fabricated up to the metal-1 level using basic processing steps of a CMOS front-end-of-line for 65 nm node and beyond. The study of the electric properties reveals that polycrystalline silicon diodes have a high current density in excess of 105 A/cm2 and exhibit good rectification ratio, even at temperatures as high as 125 °C. Besides single devices, cross-point arrays with polycrystalline Silicon diodes have also been investigated.