Ni/HfO2/SiC and Ni/TiO2/SiC structures were fabricated. Schottky parameters were extracted from variable temperature Current-Voltage curves. Insulating layers thicknesses were estimated by modified Thermionic Emission model. Thicker dielectrics increase ideality factor and reduce Schottky Barrier Height. The fabricated Schottky diodes can be used as particle detectors.