Peculiarities of strain relaxation in linearly graded InxGa1−xAs/GaAs(001) metamorphic buffer layers grown by molecular beam epitaxy
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- 作者：S.V. Sorokin ; sorokin@beam.ioffe.ru ; G.V. Klimko ; I.V. Sedova ; A.A. Sitnikova ; D.A. Kirilenko ; M.V. Baidakova ; M.A. Yagovkina ; T.A. Komissarova ; K.G. Belyaev ; S.V. Ivanov
- 关键词：A1. Crystal structure ; A1. Stresses ; A1. X-ray diffraction ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 December 2016
- 年：2016
- 卷：455
- 期：Complete
- 页码：83-89
- 全文大小：2306 K
- 卷排序：455
文摘
Linearly graded InxGa1−xAs/GaAs (001) metamorphic buffer layers were grown by MBE. The depth profiling RSM is used to visualize the strain relaxation process. The unintentional initial miscut of a GaAs substrate affects the strain relaxation dynamics.