Nanomechanical resonant structures in silicon nitride: fabrication, operation and dissipation issues

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• 作者：Sekaric ; L. ; Carr ; D.W. ; Evoy ; S. ; Parpia ; J.M. ; Craighead ; H.G.
• 关键词：Nanomechanics ; Silicon nitride ; Mechanical quality factor ; Dissipation
• 刊名：Sensors and Actuators A: Physical
• 出版年：2002
• 出版时间：September 30, 2002
• 年：2002
• 卷：101
• 期：1-2
• 页码：215-219
• 全文大小：191 K

文摘

We report the fabrication of silicon nitride mechanical devices with lateral dimensions as small as 50nm. The measured resonant frequencies of these devices (8.5–171MHz) are the highest reported for silicon nitride structures. We have employed both electrostatic and piezoelectric excitation of these structures. We have also studied the effects of thin metal films on dissipation in these structures and found that the absence of these metal coatings results in a three to four times higher quality factor of the structures.