The ground state properties of In(Ga)As/GaAs low strain quantum dots
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- 作者：Maciej Pieczarka ; maciej.pieczarka@pwr.edu.pl" class="auth_mail" title="E-mail the corresponding author ; Grzegorz Sęk
- 关键词：Quantum dots ; Piezoelectric effect ; Quantum confinement ; Elongation ; InGaAs
- 刊名：Physica B: Physics of Condensed Matter
- 出版年：2016
- 出版时间：15 August 2016
- 年：2016
- 卷：495
- 期：Complete
- 页码：70-75
- 全文大小：946 K
文摘
We present theoretical studies on the confined states in low-strain In(Ga)As quantum dots (QDs). The 8-band k·p model together with the continuum elasticity theory and piezoelectric fields were employed to calculate the potential and confined electron and hole eigenstates. We focused on low-indium-content QDs with distinct in-plane asymmetry, which are naturally formed in the low strain regime of the Stranski-Krastanow growth mode. It has been found that the naturally thick wetting layer together with piezoelectric potential affect the total confinement potential to such extent that the hole eigenstates can get the spatial in-plane orientation orthogonal to the main axis of the dot elongation. This can influence both, qualitatively and quantitatively, many of the electronic and optical properties, as e.g. the polarization selection rules for the optical transition or the transitions oscillator strength. Eventually, importance of the degree of the shape asymmetry or the dots’ size, and differences between the low-strain (low-In-content) QDs and pure InAs dots formed in high strain conditions are discussed.