A 1.3-μm four-channel directly modulated laser array fabricated by SAG-Upper-SCH technology
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- 作者：Fei Guo ; Dan Lu ; ludan@semi.ac.cn" class="auth_mail" title="E-mail the corresponding author ; Ruikang Zhang ; Songtao Liu ; Mengdie Sun ; Qiang Kan ; Chen Ji
- 关键词：Monolithically integrated laser array ; Directly modulated laser ; Selective area growth (SAG) ; Modified butt-joint
- 刊名：Optics Communications
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：383
- 期：Complete
- 页码：577-580
- 全文大小：1005 K
文摘
A monolithically integrated four-channel directly modulated laser (DML) array working at the 1.3-μm band is demonstrated. The laser was manufactured by using the techniques of selective area growth (SAG) of the upper separate confinement heterostructure (Upper-SCH) and modified butt-joint method. The fabricated device showed stable single mode operation with the side mode suppression ratio (SMSR) >35 dB, and high wavelength accuracy with the deviations from the linear fitted values <±0.03 nm for all channels. Furthermore, small signal modulation bandwidth >7 GHz was obtained, which may be suitable for 40 GbE applications in the 1.3-μm band.