Si(100)2¡Á1 Epitaxy: A Kinetic Monte Carlo Simulation of the Surface Growth

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• 作者：Vivien Gü ; nther ; ^{Vivien.Guenther@tu-cottbus.de} ; Fabian Mauß
• 关键词：Type your keywords here ; separated by semicolons
• 刊名：Physics Procedia
• 出版年：2013
• 出版时间：2013
• 年：2013
• 卷：40
• 期：Complete
• 页码：56-64
• 全文大小：3522 K

文摘

We have carried out Kinetic Monte Carlo (KMC) simulations on the epitaxial growth of silicon (100)2 ¡Á 1 as a function of surface temperature (570-770 ¡ãC). The KMC algorithm including almost 130 reactions such as silane adsorption, SiH_x decomposition and diffusion of adsorbed species supplies an exhaustive stochastic model reproducing the surface growth of silicon (100)2 ¡Á 1 during silane gas phase epitaxy. The model provides a good representation of experimental observations and theoretical knowledge. Model predictions of hydrogen coverage are in good agreement with experimental data.