Thermoelectric properties of Tl-doped PbTeSe crystals grown by directional solidification
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- 作者：Ching-Hua Su ; ching.h.su@nasa.gov" class="auth_mail" title="E-mail the corresponding author
- 关键词：A2. Bridgman technique ; B2. Semiconducting lead compounds ; B3. Thermoelectric materials
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 April 2016
- 年：2016
- 卷：439
- 期：Complete
- 页码：80-86
- 全文大小：2002 K
文摘
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Three Tl-doped PbTe and two Tl-doped PbTeSe crystals were grown.
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Figure of Merit for thermoelectric application, zT, was measured from 30 to 640 °C.
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Tl-doped PbTeSe samples have the highest zT value of 1.63 at 425 to 475 °C.
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Tl-doped PbTe samples have zT value of 1.13 at 410 °C.