Formation of SiC layer by carbonization of Si surface using CO gas
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- 作者：Momoko Deuraa ; deura@imr.tohoku.ac.jp" class="auth_mail" title="E-mail the corresponding author ; Hiroyuki Fukuyamab
- 关键词：A1. Phase diagrams ; A1. Surface processes ; B2. Semiconducting silicon compounds
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 January 2016
- 年：2016
- 卷：434
- 期：Complete
- 页码：77-80
- 全文大小：1827 K
文摘
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Carbonization of a Si surface was performed using C-saturated CO gas.
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The experimental conditions were speculated on the basis of thermodynamic data.
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SiC layers with a single orientation were formed on the entire Si substrate surface.
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Nucleus growth mode leads to poor in-plane uniformity of the amount of SiC.
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The Si(110) surface was the most reactive for this CO carbonization system.