Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing

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• 作者：Ningbo Jia^a ; Yadong Xu^a ; ^b ; ^{xyd220@nwpu.edu.cn} ; Rongrong Guo^a ; Yaxu Gu^a ; Xu Fu^a ; Yuhan Wang^a ; Wanqi Jie^a
• 关键词：A1. Line defects ; A1. Substrates ; A2. Bridgman technique ; B1. Cadmium compounds ; B2. Semiconducting ternary compounds
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：457
• 期：Complete
• 页码：343-348
• 全文大小：2601 K
• 卷排序：457

文摘

Dislocation annihilation and out-diffusion lead to the dislocation reduction. <110> dislocation reactions cause formation of dislocation walls during annealing. Stress relaxed during annealing is the driving force for dislocation migration.