A new heterostructures fabrication technique and properties of produced SbSI/Sb₂S₃ heterostructures

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• 作者：Bart艂omiej Toro艅 ; Marian Nowak ; Miros艂awa K臋pi艅ska ; Andrzej Grabowski ; Janusz Szala ; Piotr Szperlich ; Iwona Malka ; Tomasz Rzycho艅
• 关键词：Heterostructures ; Heterojunctions ; Antimony sulfoiodide ; Laser processing
• 刊名：Optics and Lasers in Engineering
• 出版年：April, 2014
• 年：2014
• 卷：55
• 期：Complete
• 页码：232-236
• 全文大小：1141 K

文摘

A new technique for heterostructure fabrication in semiconducting compounds has been proposed. Heterojunctions have been made by applying CO₂ laser beam. In contradistinction to currently applied methods (MBE - Molecular Beam Epitaxy and CVD - Chemical Vapor Deposition) the presented technique is simple, of low-cost and very efficient. The new technique has been tested on antimony sulfoiodide (SbSI) single crystals, i.e., a semiconducting, ferroelectric material characterized by many valuable properties. The most important structural, optical and electrical properties of the obtained heterostructures have been presented. Studies have shown that in the CO₂ laser treated samples the junction exists between SbSI single crystal and amorphous phase of antimony sulfide (Sb₂S₃). At room temperature difference between energy gaps of both parts of SbSI/Sb₂S₃ heterostructure is equal to 0.3 eV. This leads to many interesting phenomena and potential applications.