Synthesis of high-purity boron nitride single crystals under high pressure by using Ba–BN solvent

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• 作者：T. Taniguchi ; K. Watanabe
• 关键词：A1. Impurities ; A2. Growth from High-temperature solutions ; A2. High-pressure crystal growth ; B1. Boron nitride ; B2. Semiconducting III– ; V materials ; B2. Ultraviolet light luminescence
• 刊名：Journal of Crystal Growth
• 出版年：2007
• 出版时间：15 May 2007
• 年：2007
• 卷：303
• 期：2
• 页码：525-529
• 全文大小：293 K

文摘

High-purity cubic boron nitride (cBN) and hexagonal boron nitride (hBN) single crystals were synthesised at 4.5 GPa and 1500 °C using barium boron nitride as a solvent. Secondary ion mass spectrometry was used to analyse impurities in the crystals. Fine cBN and hBN crystals, whose oxygen and carbon concentrations were less than 10¹⁸ atoms/cm³, were obtained, and their band-edge optical properties were measured by cathodoluminescence spectroscopy. High-purity hBN single crystals exhibited intense ultraviolet emission, demonstrating their promise for use as deep ultraviolet-light emitters.