Effects of Zn-doping process on the growth of various InGaAsP alloys were analysed.

Compositional variation, reductions in growth rate and lattice constant were observed due to doping.

Independent of composition, TMGa/TMIn decomposition ratio increases with increasing DEZn flow.

The dependence of arsenic/phosphorus incorporation on DEZn flow depends on InGaAsP composition.

Compositional variation is the primary cause of the observed tensile strain.